Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-05-21
1998-10-20
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257623, 438713, H01L 2904
Patent
active
058250506
ABSTRACT:
Defect density of amorphous silicon layers is increased from the lowest layer toward the highest layer by controlling one of or both of the pressure of gaseous mixture containing silane and hydrogen and the flow rate of the hydrogen, and a dry etching tapers both end portions of the amorphous silicon layers so as to improve the step coverage of a metal layer formed into source and drain electrodes.
REFERENCES:
patent: 5198694 (1993-03-01), Kwasnick et al.
patent: 5311040 (1994-05-01), Hiramatsu et al.
NEC Corporation
Prenty Mark V.
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