Thin-film transistor having source and drain electrodes insulate

Details Thin-film transistor having source and drain electrodes insulate Thin-film transistor having source and drain electrodes insulate

1992-09-02

1994-08-02

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 59, 257 66, 257 72, 257347, H01L 2904, H01L 2701

Patent

active

053348591

ABSTRACT:
A thin-film transistor panel comprises an insulative substrate, a plurality of thin-film transistor elements arranged at predetermined intervals on said substrate, and wirings electrically connecting the thin-film transistor elements characterized in that the thin-film transistor element comprises a gate electrode, a gate-insulating film, an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween, an n-type semiconductor layer, source and drain electrodes electrically connected the portions of the i-type semiconductor layer through the n-type semiconductor layer, and an anodically oxidized film located between the source and drain electrodes to electrically isolate, said source and drain electrodes.

REFERENCES:
patent: 4624737 (1986-11-01), Shimbo
patent: 5166085 (1992-11-01), Wakai et al.
Patent Abstracts of Japan, vol. 10, No. 367 (E-462) (2424) Dec. 9, 1986, & JP-A-61 164 267 (NEC), Jul., 1986.
Patent Abstracts of Japan, vol. 10, No. 255 (E-433) Sep. 2, 1986, & JP-A-61 084 057 (Fuji Xerox) Apr., 1986.
Patent Abstracts of Japan, vol. 13, No. 279 (P-891) (3627) Jun. 27, 1989 & JP-A-01 68 730 (Seiko) Mar., 1989.

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