Thin-film-transistor having Schottky barrier

Details Thin-film-transistor having Schottky barrier Thin-film-transistor having Schottky barrier

1991-04-26

1992-10-27

Hille, Rolf

357 42, 357 15, H01L 2701, H01L 2702, H01L 2948

Patent

active

051594161

ABSTRACT:
Disclosed herein is a semiconductor device including a thin-film-transistor which comprises a silicon film formed on an insulating layer and including a substrate area, a gate provided to form a channel in the substrate area, a source consisting of a first metal silicide film forming a Schottky barrier with the substrate area, and a drain including a second metal silicide film. The second metal silicide film forms a Schottky barrier with the substrate area or is in ohmic contact with an impurity region selectively formed in the silicon film with a PN junction with the substrate area.

REFERENCES:
patent: 4754314 (1988-06-01), Scott et al.
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patent: 4942441 (1990-07-01), Konishi et al.
Patent Abstracts of Japan, vol. 13, No. 136 (E-737), 05 Apr. 1989 & JP-A-63 300566 (Sharp Corp.) 07 Dec. 1988.
Patent Abstracts of Japan, vol. 12, No. 293 (E-645), 10 Aug. 1988 & JP-A-63 070576 (Kamatsu Ltd.), 30 Mar. 1988.
Patent Abstracts of Japan, vol. 013, No. 507 (E-845), 14 Nov. 1989 & JP-A-01 202870 (NEC Corp.), 15 Aug. 1989.
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Patent Abstracts of Japan, vol. 7, No. 58 (E-163)(1203), 10 Mar. 1983 & JP-A-57 204171 (Mitsubishi Denki K.K.), 14 Dec. 1982.
Journal of the Electrochemical Society, vol. 136, No. 5, May 1989, Manchester, New Hamp., pp. 1456-1459; Bing-Yue Tsui et al.: "A Novel Process for High-Performance Schottky Barrier PMOS".

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