Thin film transistor having redundant metal patterns

Details Thin film transistor having redundant metal patterns Thin film transistor having redundant metal patterns

1994-12-20

1996-09-24

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257920, 257 72, 257773, 257758, 359 87, 359 88, H01L 31036

Patent

active

055593453

ABSTRACT:
There is disclosed an LCD element which prevents delamination of a main data line and a redundancy line caused by the stress therebetween and breaking of the data line. It comprises a partially patterned redundancy line which reinforces a data line to prevent wire-breaking of the data line. According to the reinforcement, the stress is reduced, which leads to increasing adhesion between an ITO transparent electrode and the source-drain electrode. The advantages are accomplished by patterning the main data line and the redundancy line in part, forming the ITO and the source electrode in a variety of patterns or changing the lamination order therebetween.

REFERENCES:
patent: 4804953 (1989-02-01), Castleberry
patent: 5334860 (1994-08-01), Naito

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