Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is selenium or tellurium in elemental form
Reexamination Certificate
2008-02-07
2010-12-14
Pizarro, Marcos D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is selenium or tellurium in elemental form
C257S043000
Reexamination Certificate
active
07851791
ABSTRACT:
Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.
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Cho Doo-Hee
Kim Keongam
Lee Sang Su
Song Kibong
Suh Jeong Dae
Electronics and Telecommunications Research Institute
Lahive & Cockfield LLP
Lee, Esq. EuiHoon
Pizarro Marcos D
Tang Sue
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