Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-12-07
1996-09-03
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257 53, 257 72, 257659, H01L 310232, H01L 2904, H01L 31036, H01L 23552
Patent
active
055526306
ABSTRACT:
A thin film transistor includes an insulating substrate, a gate electrode formed on the substrate, a first insulating layer formed on the gate electrode, a semiconductor layer formed on the first insulating layer over the gate electrode, a second insulating layer formed on the semiconductor layer over the gate electrode, a drain electrode having a predetermined width formed on the semiconductor layer and overlapping a side portion of the second insulating layer, a source electrode formed on the semiconductor layer opposing the drain electrode and overlapping another side portion of the second insulating layer, a third insulating layer formed on the source and the drain electrodes width, and a metallic layer formed on the third insulating layer having a width greater than the predetermined width and covering a predetermined length of the drain electrode.
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patent: 5160835 (1992-11-01), Yagyu
Fuji 'Xerox Co., Ltd.
Loke Steven H.
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