Thin film transistor having memory function and method for using

Details Thin film transistor having memory function and method for using Thin film transistor having memory function and method for using

1991-03-13

1993-03-23

James, Andrew J.

357 2, 357 4, 357 54, H01L 2701, H01L 2968, H01L 2934

Patent

active

051969122

ABSTRACT:
A memory element is formed of a thin film transistor. The thin film transistor has a semiconductor layer, a source electrode electrically connected to the semiconductor layer, a drain electrode electrically connected to the semiconductor layer and formed separately from the source electrode, a gate electrode for controlling formation of a channel of the semiconductor layer, and a gate insulation film for isolating the gate electrode and the semiconductor layer from each other and causing a hysteresis in the relation between the drain current and the gate circuit. The insulation film is a silicon nitride film whose composition ratio of silicon to nitrogen is in a range of approx. 0.85 to 1.1. According to this invention, the relation between the gate voltage and the drain current can be set to have a hysteresis. Therefore, the thin film transistor can be used as a memory element. Further, according to this invention, data can be written, erased and read out by selectively applying an electric field to the gate insulation film. Therefore, the thin film transistor can be used as a memory element.

REFERENCES:
patent: 3800411 (1974-04-01), Abbink et al.
patent: 3859642 (1975-01-01), Mar
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 4053917 (1977-10-01), Blaha et al.
patent: 4096509 (1978-06-01), Blaha et al.
patent: 4323910 (1982-04-01), Sokoloski et al.
patent: 4353083 (1982-10-01), Trudel et al.
patent: 4481527 (1984-11-01), Chen et al.
patent: 4533934 (1985-08-01), Smith
patent: 4611308 (1986-09-01), Lonky
patent: 4667217 (1987-05-01), Janning
patent: 4673957 (1987-06-01), Ovshinsky et al.
patent: 4686558 (1987-08-01), Adam
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4821092 (1989-04-01), Noguchi
patent: 4876582 (1989-10-01), Janning
patent: 4885616 (1989-12-01), Ohta
patent: 4920392 (1990-04-01), Nishiura
patent: 4951113 (1990-08-01), Huang et al.
patent: 5028976 (1991-07-01), Ozaki et al.
Kim et al, "Amorphous silicon thin-film transistors with two-layer gate insulator", Appl. Phys. Letter, vol. 51, No. 21, May 22, 1989.
Interface Modification to Enhance DC and Pulse Response of MNOS Memory Transistors, by McLouishi; Abstract 313, Oct. 22, 1976; pp. 805-807.
PECVD Silicon Nitride: Deposition and Post-Deposition Modification for Application in Memory Devices, Brown, Abstract 274, Oct. 14, 1988, Electrochemical Society Meetings Abstract.

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