Thin film transistor having LDD structure

Details Thin film transistor having LDD structure Thin film transistor having LDD structure

2007-07-24

2007-07-24

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S059000, C257SE27100, C438S048000, C438S128000, C438S149000, C438S151000, C438S157000, C438S283000

Reexamination Certificate

active

11038031

ABSTRACT:
A thin film transistor having a LDD structure that may improve its channel reliability and output characteristics. A semiconductor layer comprises source/drain regions, a channel region positioned between the source/drain regions, and an LDD region positioned between the channel region and a source/drain region, wherein a projected range of ions doped on the semiconductor layer extends to a first depth from the surface of the semiconductor layer in the LDD region.

REFERENCES:
patent: 5698882 (1997-12-01), Park
patent: 6127211 (2000-10-01), Hirao et al.
patent: 6833313 (2004-12-01), Hayakawa
patent: 10-2001-0039227 (2001-05-01), None
patent: 10-2002-0050085 (2002-06-01), None

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