Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-04-17
1997-06-10
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 67, 257 69, 257 72, 257347, 257352, 257903, H01L 2904, H01L 2976, H01L 27108, H01L 2701
Patent
active
056378840
ABSTRACT:
A thin film transistor includes a first active layer formed on a substrate; a gate electrode formed on a center portion of the first active layer and having a lower side connected to the center portion of the first active layer; a second active layer electrically connected to the first active layer and formed on lateral sides and on an upper side of the gate electrode; and impurity regions formed at opposing lateral sides of the gate electrode. A method of manufacturing a thin film transistor includes the steps of forming a patterned layer on a substrate; forming a gate electrode which crosses the patterned layer; removing the patterned layer; forming a gate insulating film on a surface of the gate electrode including a portion of the gate electrode from which the patterned layer has been removed; forming an active layer which crosses the portion of the gate electrode from which the patterned layer has been removed and an upper portion of the gate electrode; and forming impurity regions at opposing lateral sides of the gate electrode.
REFERENCES:
patent: 5095347 (1992-03-01), Kirsch
S. Maegawa et al., "A 0.4.gamma.m Gate-All-Around TFT(GAT) Using a Dummy Nitride Pattern for High Density Memories", Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, pp. 907-909 (1994).
K. Hamada et al., "Improvement of Poly-Si TFT Characteristics by Hydrogenation at SiO.sub.2 /Poly-Si Interfaces, Characterized by TDS Measurement of Deuterium Terminated Poly-Si", Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, pp. 470-472 (1994).
LG Semicon Co. Ltd.
Martin Wallace Valencia
Saadat Mahshid D.
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