Thin film transistor having grain boundaries with segregated oxy

Details Thin film transistor having grain boundaries with segregated oxy Thin film transistor having grain boundaries with segregated oxy

1997-01-17

2000-07-25

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material forms active...

257 49, 257 50, 257 52, 257 57, 257 64, 257 65, 257 66, 257 69, 257347, 257353, 438162, 438166, 438486, 438487, H01L 2184

Patent

active

060939346

ABSTRACT:
Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm.sup.2 /Vs and an S value smaller than 100 mV/dec. can be obtained.

REFERENCES:
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5696003 (1997-12-01), Makita et al.
patent: 5696338 (1997-12-01), Funada et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5756364 (1998-05-01), Tanaka et al.
Technology Information Association, "Thermo-Autochrome Full Color Recording Technology," May 31, 1995.

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