Thin film transistor having enhance stability in electrical char

Details Thin film transistor having enhance stability in electrical char Thin film transistor having enhance stability in electrical char

1991-02-28

1993-12-21

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257410, 257411, 257640, 257649, H01L 2701, H01L 2713, H01L 2978

Patent

active

052723607

ABSTRACT:
A microwave plasma enhanced CVD method and apparatus wherein a microwave is applied, after expanded, over a greater area than the area in which a desired thin film is to be formed. With this arrangement, uniform microwave application is assured to produce uniform plasma over a wide area. This enables realization of a large size liquid crystal display.

REFERENCES:
patent: 4933206 (1990-06-01), Cox
patent: 5045487 (1991-09-01), Kodama et al.
patent: 5051800 (1991-09-01), Shoji et al.

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