Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-11-12
1994-11-22
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257770, 257771, 359 87, H01L 2348
Patent
active
053671791
ABSTRACT:
A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.
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Ishii Hiromitsu
Konya Naohiro
Matsuda Kunihiro
Mori Hisatoshi
Ohno Ichiro
Bowers Courtney A.
Casio Computer Co. Ltd.
James Andrew J.
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