Thin film transistor having double gate insulating layer

Details Thin film transistor having double gate insulating layer Thin film transistor having double gate insulating layer

1997-04-14

1998-05-12

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 61, 257 66, 257347, 257406, 257411, H01L 2904

Patent

active

057510172

ABSTRACT:
A thin film transistor and method includes a substrate and a first semiconductor layer formed on the substrate. A first insulating layer is formed on the first semiconductor layer, and a doped semiconductor layer is formed on an upper portion of the first semiconductor layer at first and second sides of the first insulating layer. A second insulating layer is formed on the first insulating layer and the doped semiconductor layer, the second insulating layer having contact holes. A gate electrode is formed on a portion of the second insulating layer, and source and drain electrodes are formed on portions of the second insulating layer, the source and drain electrodes contacting the doped semiconductor layer through the contact holes, respectively.

REFERENCES:
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5468987 (1995-11-01), Yamazaki et al.

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