Thin film transistor having double channels and its manufacturin

Details Thin film transistor having double channels and its manufacturin Thin film transistor having double channels and its manufacturin

1997-07-08

1999-03-16

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 77, 257241, 257244, 257266, 257287, 257330, 257347, 438149, 438259, H01L 29205

Patent

active

058833994

ABSTRACT:
This invention provides a method for manufacturing a this film transistor which comprised the steps of providing an oxide layer; etching a portion of the oxide layer so that a recess is formed; forming a first channel layer on the resulting structure; forming a first gate oxide layer on the first channel layer in a portion including the recess region; forming a polysilicon layer on the resulting structure, filling in the recess region; etching back the polysilicon layer until the surface of a portion of the first gate oxide layer, leaving the residual layer on the first channel layer, which is exposed by the first gate oxide layer, wherein the surface of the resulting structure has uniform topology by the etching process; forming a second gate oxide layer on the polysilicon layer; forming a second channel layer on the resulting structure; and implanting impurity ions for forming source/drain regions, whereby the source/drain region consists of multi-layers, the first channel layer, the second polysilicon layer and the second channel layer.

REFERENCES:
patent: 4951102 (1990-08-01), Beitman et al.
patent: 5082795 (1992-01-01), Temple
patent: 5221849 (1993-06-01), Goronkin et al.
patent: 5298782 (1994-03-01), Sundaresan
patent: 5348899 (1994-09-01), Dennison et al.
patent: 5362669 (1994-11-01), Boyd et al.
patent: 5372959 (1994-12-01), Chan

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