Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-06-07
1997-08-12
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 72, 257347, 257351, 257352, H01L 2976, H01L 2701
Patent
active
056568258
ABSTRACT:
An amorphous semiconductor film having a thickness of 400.ANG. or more is formed on an insulating surface and is wholly or selectively etched to form a region having a thickness 300.ANG. or less. This is used as a channel-forming region in a TFT.
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C. Hayzelden et al. "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages), Oct. 1991.
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Kusumoto Naoto
Ohtani Hisashi
Takemura Yasuhiko
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Evan R.
Tran Minh-Loan
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