Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1992-03-05
1994-05-10
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257352, 257354, H01L 2701, H01L 2713, H01L 2978
Patent
active
053110412
ABSTRACT:
A thin film transistor having an inverted stagger type structure is formed on a substrate. A gate film having a gate electrode portion is formed on the substrate. A gate insulating film is formed on the gate electrode portion of the gate film such that the gate insulating film is located entirely inside a perimeter defied by the outer edges of the gate electrode portion. A polycrystalline semiconductor film, which is an active layer of the transistor, is formed on the gate insulating film such that it is entirely inside a perimeter defined by the outer edges of the gate insulating layer. The polycrystalline semiconductor film, gate insulating film and gate film are selectively photoetched after being formed on the substrate. Source and drain electrode films are formed so that the electrode films electrically connect with the polycrystalline semiconductor film.
REFERENCES:
patent: 4748485 (1988-05-01), Vasudev
patent: 5196912 (1993-03-01), Matsumoto et al.
Japanese Journal of Applied Physics, vol. 28, No. 11, Nov. 1989, pp. 2197-2200, Kouichi Hiranaka et al Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors.
Hasebe Yuji
Hattori Tadashi
Sakakibara Nobuyoshi
Tominaga Takayuki
Ngo Ngan
Nippondenso Co. Ltd.
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