Thin film transistor having a multi-layer stacked channel and it

Details Thin film transistor having a multi-layer stacked channel and it Thin film transistor having a multi-layer stacked channel and it

1993-06-30

1994-12-13

Fourson, George

Fishing, trapping, and vermin destroying

437915, 437101, 437909, 148DIG164, H01L 21265

Patent

active

053729595

ABSTRACT:
Disclosed is a thin film transistor used to manufacture a highly integrated SRAM or LCD and its manufacturing method, and more particularly, to a thin film transistor having a multi-layer stacked channel in order to increase the current flow during the thin film transistor's ON state by securing a enough channel width despite of the limited area. A thin film transistor on which a channel had been deposited in accordance with the present invention can be manufactured in a small area; accordingly, a highly integrated SRAM can be manufactured by decreasing the area of the unit cell of SRAM. Also, the resolution can be enhanced by decreasing the area occupied by the thin film transistor in the panel during the manufacturing process of the LCD.

REFERENCES:
patent: 5221849 (1993-06-01), Goronkin et al.

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