Thin film transistor having a metal induced lateral...

Details Thin film transistor having a metal induced lateral... Thin film transistor having a metal induced lateral...

2007-05-22

2007-05-22

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S069000, C438S157000

Reexamination Certificate

active

10990514

ABSTRACT:
A thin film transistor and method for fabricating the same are provided. The thin film transistor comprises a semiconductor layer having a MILC region that has first crystalline grains crystallized by MILC method and second crystalline grains disposed between the first crystalline grains and having different crystalline properties from the first crystalline grains.

REFERENCES:
patent: 6501095 (2002-12-01), Yamaguchi et al.
patent: 2003/0089907 (2003-05-01), Yamaguchi et al.
patent: 2004/0166655 (2004-08-01), Wong et al.
patent: 1109212 (1995-09-01), None
patent: 1186326 (1998-07-01), None
patent: 1431718 (2003-07-01), None
patent: 10-1999-0039331 (1999-06-01), None
patent: 10-2002-0036926 (2002-05-01), None

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