Thin film transistor formed on insulating substrate

Details Thin film transistor formed on insulating substrate Thin film transistor formed on insulating substrate

1987-10-28

1990-09-04

Wojciechowicz, Edward J.

357 2, 357 59, 357 67, H01L 2978

Patent

active

049548557

ABSTRACT:
A thin film transistor formed on an insulating sulstrate is disclosed in which metal silicide layers are formed in a thin film made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer.

REFERENCES:
patent: 4319395 (1982-03-01), Lund et al.
patent: 4336550 (1982-06-01), Medwin
patent: 4554572 (1985-11-01), Chatterjee
patent: 4797108 (1989-11-01), Crowther
IEEE Transactions on Electron Devices, ED-31, No. 9, Sep. 1984, pp. 1329-1334, Okabayashi et al.,
Snell,-App. Phys. 24, 357-362, (1981).

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