Thin film transistor for use in active matrix type organic...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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C257S040000, C257S094000

Reexamination Certificate

active

06930331

ABSTRACT:
An organic light emitting diode device includes an array layer having a plurality of thin film transistors, an organic light emitting diode formed on a second substrate, a plurality of connection patterns disposed between the first and second substrates, the connection pattern connecting a respective thin film transistor to the corresponding organic light emitting diode and a sealant between the first and second substrates, wherein each thin film transistor includes: a gate electrode on the first substrate, the gate electrode having an opening in the middle thereof; a gate insulating layer over the gate electrode; a semiconductor layer on the gate insulating layer above the gate electrode; a drain electrode on the semiconductor layer corresponding to the opening of the gate electrode; and first and second source electrodes formed respectively on both sides of the semiconductor layer and spaced apart from the drain electrode.

REFERENCES:
patent: 6781746 (2004-08-01), Yamazaki et al.
patent: 6833560 (2004-12-01), Konuma et al.
patent: 2003/0231263 (2003-12-01), Kato et al.
patent: 2005/0012694 (2005-01-01), Park et al.

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