Patent
1990-05-23
1991-09-17
James, Andrew J.
357 2, 357 237, H01L 4500, H01L 2712, H01L 4902, H01L 2978
Patent
active
050499521
ABSTRACT:
A thin film transistor for use in a flat plate display comprising an amorphous silicon layer, a gate electrode, and a source electrode partially separated into a first source subelectrode and second source subelectrode, wherein said gate and source electrodes are deposited on said amorphous silicon layer to form a cross over with each other, a drain electrode connected with said gate electrode, and a picture element electrode connected with said drain electrode.
REFERENCES:
patent: 4803536 (1989-02-01), Tuan
patent: 4821092 (1989-04-01), Noguchi
patent: 4907861 (1990-03-01), Muto
patent: 4948231 (1990-08-01), Aoki et al.
James Andrew J.
Meier Stephen D.
Samsung Electron Devices Co. Ltd.
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