Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-12-04
2009-11-24
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE29273, C257SE21413, C438S151000
Reexamination Certificate
active
07622739
ABSTRACT:
A thin film transistor for a flat panel display, and more particularly to a thin film transistor for a flat panel display having a protrusion in a part of a gate electrode includes a substrate on which an insulating layer is deposited, a semiconductor layer, which is a layer having predetermined width and length on the insulating layer, provided with doping regions in a letter U shape and a channel region between the doping regions; a gate insulating layer formed on the semiconductor layer; a gate electrode formed on the gate insulating layer to traverse the doping region; and a protrusion, which is a part of the gate electrode, formed on the gate insulating layer to be opposed to the channel region.
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Notice of Allowance issued in Korean Patent Application No. 2007-33840 on Oct. 28, 2008.
Purvis Sue
Samsung Mobile Display Co., Ltd.
Stein McEwen, LLP
Stowe Scott
LandOfFree
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