Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2008-05-29
2011-11-08
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257SE21158, C257SE29151, C438S104000
Reexamination Certificate
active
08053773
ABSTRACT:
A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.
REFERENCES:
patent: 5576229 (1996-11-01), Murata et al.
patent: 5693961 (1997-12-01), Hamada
patent: 5747830 (1998-05-01), Okita
patent: 5866946 (1999-02-01), Kamigaki et al.
patent: 6150692 (2000-11-01), Iwanaga et al.
patent: 6746905 (2004-06-01), Fukuda
patent: 7064374 (2006-06-01), Solayappan et al.
patent: 2002/0125573 (2002-09-01), Cuchiaro et al.
patent: 2002/0127867 (2002-09-01), Lee
patent: 2005/0280123 (2005-12-01), Lee
patent: 2006/0091474 (2006-05-01), Nabatame et al.
patent: 2007/0069209 (2007-03-01), Jeong et al.
patent: 2007/0298549 (2007-12-01), Jurczak et al.
patent: 2009/0065771 (2009-03-01), Iwasaki et al.
patent: 2002-289854 (2002-10-01), None
patent: 2004-273614 (2004-09-01), None
patent: 10-2002-0014201 (2002-02-01), None
patent: 10-2002-0060844 (2002-07-01), None
patent: 10-0352885 (2002-09-01), None
patent: 10-0508023 (2005-08-01), None
Myong, et al., “Role of Intentionally Incorporated Hydrogen in Wide-Band-Gap ZnO Thin Film Prepared by Photo-MOCVD Technique”, Physics of Semiconductors, 27th International Conference on the Physics of Semiconductors, AIP Conf. Proc., pp. 195-196 (Jun. 30, 2005).
Jeong Jae-kyeong
Jeong Jong-han
Lee Hun-jung
Mo Yeon-gon
Park Jin-seong
Carpenter Robert
Lee & Morse P.C.
Richards N Drew
Samsung Mobile Display Co., Ltd.
LandOfFree
Thin film transistor, flat panel display device having the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor, flat panel display device having the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor, flat panel display device having the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4289960