Thin film transistor, flat panel display device having the...

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21158, C257SE29151, C438S104000

Reexamination Certificate

active

08053773

ABSTRACT:
A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.

REFERENCES:
patent: 5576229 (1996-11-01), Murata et al.
patent: 5693961 (1997-12-01), Hamada
patent: 5747830 (1998-05-01), Okita
patent: 5866946 (1999-02-01), Kamigaki et al.
patent: 6150692 (2000-11-01), Iwanaga et al.
patent: 6746905 (2004-06-01), Fukuda
patent: 7064374 (2006-06-01), Solayappan et al.
patent: 2002/0125573 (2002-09-01), Cuchiaro et al.
patent: 2002/0127867 (2002-09-01), Lee
patent: 2005/0280123 (2005-12-01), Lee
patent: 2006/0091474 (2006-05-01), Nabatame et al.
patent: 2007/0069209 (2007-03-01), Jeong et al.
patent: 2007/0298549 (2007-12-01), Jurczak et al.
patent: 2009/0065771 (2009-03-01), Iwasaki et al.
patent: 2002-289854 (2002-10-01), None
patent: 2004-273614 (2004-09-01), None
patent: 10-2002-0014201 (2002-02-01), None
patent: 10-2002-0060844 (2002-07-01), None
patent: 10-0352885 (2002-09-01), None
patent: 10-0508023 (2005-08-01), None
Myong, et al., “Role of Intentionally Incorporated Hydrogen in Wide-Band-Gap ZnO Thin Film Prepared by Photo-MOCVD Technique”, Physics of Semiconductors, 27th International Conference on the Physics of Semiconductors, AIP Conf. Proc., pp. 195-196 (Jun. 30, 2005).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film transistor, flat panel display device having the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor, flat panel display device having the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor, flat panel display device having the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4289960

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.