Thin-film transistor fabrication process

Fishing – trapping – and vermin destroying

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437937, 437235, 437238, 437241, 437941, 437 41, 357 237, H01L 21265

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048596175

ABSTRACT:
In a thin-film transistor fabrication process using an amorphous silicon semiconductor layer, after the gate insulation layer is formed and before the a-Si semiconductor layer is formed, the surface of the gate insulation layer is treated with an H.sub.2 plasma. This treatment improves the transistor characteristics.

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