Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-08-11
1997-03-25
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 61, 257350, 257352, 349 42, 349158, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
056147317
ABSTRACT:
A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode layer and the drain electrode layer extend in the overlapping areas beyond the side wall of the channel protection layer in at least one direction of the width thereof, and the source electrode layer and the drain electrode layer possess points of overlap intersection with the semiconductor layer at the points of overlap intersection thereof with the channel protection layer. Owing to the construction described above, the leakage current generated by exposure to light can be decreased and the thin-film semiconductor element can be produced by a simple process of manufacture.
REFERENCES:
patent: 5051800 (1991-09-01), Shoji et al.
patent: 5559344 (1996-09-01), Kawachi
Fukuda Kaichi
Ibaraki Nobuki
Shimano Takuya
Suzuki Kouji
Uchikoga Shuichi
Kabushiki Kaisha Toshiba
Ngo Ngan V.
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