Thin film transistor, display device, including the same,...

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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C257SE29080

Reexamination Certificate

active

08058645

ABSTRACT:
A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.

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patent: WO 2007/108293 (2007-09-01), None
Suresh et al. “High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material.” 2007 IEEE pp. 587-590.

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