Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-12-02
2011-10-04
Dang, Phuc (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE21415, C438S158000
Reexamination Certificate
active
08030655
ABSTRACT:
A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device in a high yield are provided. In the thin film transistor, a gate electrode, a gate insulating film, crystal grains that mainly contain silicon and are provided for a surface of the gate insulating film, a semiconductor film that mainly contains germanium and covers the crystal grains and the gate insulating film, and a buffer layer in contact with the semiconductor film that mainly contains germanium overlap with one another. Further, the display device has the thin film transistor.
REFERENCES:
patent: 4409134 (1983-10-01), Yamazaki
patent: 5358925 (1994-10-01), Neville Connell et al.
patent: 5365081 (1994-11-01), Yamazaki et al.
patent: 5371380 (1994-12-01), Saito et al.
patent: 5453858 (1995-09-01), Yamazaki
patent: 5514879 (1996-05-01), Yamazaki
patent: 5591987 (1997-01-01), Yamazaki et al.
patent: 5614732 (1997-03-01), Yamazaki
patent: 5648293 (1997-07-01), Hayama et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5693238 (1997-12-01), Schmitt et al.
patent: 5701167 (1997-12-01), Yamazaki
patent: 5766989 (1998-06-01), Maegawa et al.
patent: 5811328 (1998-09-01), Zhang et al.
patent: 5849601 (1998-12-01), Yamazaki
patent: 5859445 (1999-01-01), Yamazaki
patent: 6011277 (2000-01-01), Yamazaki
patent: 6023075 (2000-02-01), Yamazaki
patent: 6107654 (2000-08-01), Yamazaki
patent: 6124155 (2000-09-01), Zhang et al.
patent: 6166399 (2000-12-01), Zhang et al.
patent: 6232242 (2001-05-01), Hata et al.
patent: 6252249 (2001-06-01), Yamazaki
patent: 6296735 (2001-10-01), Marxer et al.
patent: 6306213 (2001-10-01), Yamazaki
patent: 6307220 (2001-10-01), Yamazaki
patent: 6335213 (2002-01-01), Zhang et al.
patent: 6388270 (2002-05-01), Yamazaki et al.
patent: 6444390 (2002-09-01), Yamazaki et al.
patent: 6533534 (2003-03-01), Schmitt et al.
patent: 6545319 (2003-04-01), Deane et al.
patent: 6673255 (2004-01-01), Marxer et al.
patent: 6683012 (2004-01-01), Sasaki et al.
patent: 6690068 (2004-02-01), Yamazaki et al.
patent: 6703265 (2004-03-01), Asami et al.
patent: 6756258 (2004-06-01), Zhang et al.
patent: 6759677 (2004-07-01), Yamazaki et al.
patent: 6797548 (2004-09-01), Zhang et al.
patent: 6847064 (2005-01-01), Zhang et al.
patent: 6893922 (2005-05-01), Joo et al.
patent: 6939755 (2005-09-01), Ohtani et al.
patent: 6956236 (2005-10-01), Sasaki et al.
patent: 7015507 (2006-03-01), Yonehara et al.
patent: 7067844 (2006-06-01), Yamazaki
patent: 7098479 (2006-08-01), Yamazaki
patent: 7115902 (2006-10-01), Yamazaki
patent: 7220610 (2007-05-01), Kim
patent: 7459338 (2008-12-01), Nakayama et al.
patent: 7808000 (2010-10-01), Yamazaki et al.
patent: 2002/0043660 (2002-04-01), Yamazaki et al.
patent: 2004/0201023 (2004-10-01), Yamazaki et al.
patent: 2005/0012097 (2005-01-01), Yamazaki
patent: 2005/0017243 (2005-01-01), Zhang et al.
patent: 2006/0086935 (2006-04-01), Suzawa et al.
patent: 2007/0018165 (2007-01-01), Yamazaki
patent: 2008/0044962 (2008-02-01), Zhang et al.
patent: 2008/0164473 (2008-07-01), Tai et al.
patent: 2009/0001375 (2009-01-01), Yamazaki et al.
patent: 2009/0002591 (2009-01-01), Yamazaki et al.
patent: 2009/0142909 (2009-06-01), Jinbo et al.
patent: 2009/0166631 (2009-07-01), Yamazaki
patent: 0 473 988 (1992-03-01), None
patent: 60-098680 (1985-06-01), None
patent: 61-087371 (1986-05-01), None
patent: 04-242724 (1992-08-01), None
patent: 06-045354 (1994-02-01), None
patent: 06-077483 (1994-03-01), None
patent: 06-346245 (1994-12-01), None
patent: 07-045833 (1995-02-01), None
patent: 08-195492 (1996-07-01), None
patent: 11-121761 (1999-04-01), None
patent: 2002-246605 (2002-08-01), None
patent: 2005-049832 (2005-02-01), None
patent: 2005-167051 (2005-06-01), None
patent: 2005-203638 (2005-07-01), None
patent: 2007-005508 (2007-01-01), None
patent: 2007-035964 (2007-02-01), None
Hyun Jung Lee et al.; “Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors”;Applied Physics Letters, vol. 92, pp. 083509-1-083509-3; 2008.
Mohammad R. Esmaeili-Rad et al.; “Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements”;Applied Physics Letters, vol. 91; pp. 113511-1-113511-3; 2007.
Czang-Ho Lee et al.; “Stability of nc-Si:H TFTs With Silicon Nitride Gate Dielectric”;IEEE Transactions on Electron Devices, vol. 54, No. 1; pp. 45-51; Jan. 1, 2007.
Andrei Sazonov et al.; “Low-Temperature Materials and Thin Film Transistors for Flexible Electronics”;Proceedings of the IEEE, vol. 93, No. 8; pp. 1420-1428; Aug. 2005.
Mohammad R. Esmaeili-Rad et al.; “Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric”;Journal of Applied Physics, vol. 102; pp. 064512-1-064512-7; 2007.
Czang-Ho Lee et al.; “Top-Gate TFTs Using 13.56 MHz PECVD Microcrystalline Silicon”;IEEE Electron Device Letters, vol. 26, No. 9; pp. 637-639; Sep. 5, 2005.
Czang-Ho Lee et al.; “Postdeposition thermal annealing and material stability of 75° C. hydrogenated nanocrystalline silicon plasma-enhanced chemical vapor deposition films”; Journal of Applied Physics, vol. 98; pp. 034305-1-034305-7; Aug. 4, 2005.
Czang-Ho Lee et al.; “High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition”;Applied Physics Letters, vol. 86; pp. 222106-1-222106-3; May 24, 2005.
Czang-Ho Lee et al.; “High Mobility N-Channel and P-Channel Nanocrystalline Silicon Thin-Film Transistors”;IEDM 05: Technical Digest of International Electron Devices Meeting; pp. 937-940; 2005.
Czang-Ho Lee et al.; “Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities”;Applied Physics Letters, vol. 89; pp. 252101-1-252101-3; Dec. 18, 2006.
C.-H Lee et al.; “How to Achieve High Mobility Thin Film Transistors by Direct Deposition of Silicon Using 13.56 MHz RF PECVD?”;IEDM; pp. 295-298; 2006.
Mohammad R. Esmaeili-Rad et al., “High Stability, Low Leakage Nanocrystalline Silicon Bottom Gate Thin Film Transistors for AMOLED Displays”;IEEE-IEDM; pp. 303-306; 2006.
Toshiaki Arai et al.; “41.2: Micro Silicon Technology for Active Matrix OLED Display”;SID 07 Digest: SID International Symposium Digest of Technical Papers, vol. XXXVIII, pp. 1370-1373; 2007.
Dang Phuc
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Thin film transistor, display device having thin film... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor, display device having thin film..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor, display device having thin film... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4274576