Thin film transistor device with advanced characteristics by imp

Stock material or miscellaneous articles – Composite – Of silicon containing

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428698, 428699, 428700, 428701, 428702, 257 57, 257 59, B32B 1300

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057077460

ABSTRACT:
A thin film semiconductor device including an insulating substrate; and a structure provided on the insulating substrate and including a silicon layer containing hydrogen diffused therein and a silicon nitride layer. The insulating substrate is formed of an insulating material having a thermal expansion coefficient of 2.6.times.10.sup.-6 deg.sup.-1 or more or having a distortion point of 850.degree. C. or lower.

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