Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-07-02
1998-06-23
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 75, 438491, H01L 29786, H01L 27105
Patent
active
057711100
ABSTRACT:
A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
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Hirano Kiichi
Morimoto Yoshihiro
Sotani Naoya
Yamaji Toshifumi
Yoneda Kiyoshi
Munson Gene M.
Sanyo Electric Co,. Ltd.
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