Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Emitter region feature
Reexamination Certificate
2007-12-25
2007-12-25
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Emitter region feature
C257S149000, C257S154000, C257S480000, C257SE21135
Reexamination Certificate
active
11352159
ABSTRACT:
A semiconductor film is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film protrudes from the resist film. Next, the p-type impurities are introduced into the edge portion of the semiconductor film using the resist film as a mask. The volume density of the p-type impurities in a channel edge portion of the semiconductor film is two to five times the volume density of the p-type impurities in a channel center section. Subsequently, the resist film is removed to form a gate insulating film and a gate electrode.
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Partial English Translation of Japanese Office Action dated Jan. 16, 2007 in JP Apln No. 2002-053881.
Greer Burns & Crain Ltd.
Louie Wai-Sing
Sharp Kabushiki Kaisha
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