Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-05-31
2005-05-31
Smith, Matthew (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S060000, C257S061000
Reexamination Certificate
active
06900464
ABSTRACT:
The present invention relates to a thin film transistor device formed on an insulating substrate of a liquid crystal display device and others, a method of manufacturing the same, and a liquid crystal display device. In structure, there are provided the steps of forming a negative photoresist film on a first insulating film for covering a first island-like semiconductor film, forming a resist mask that has an opening portion in an inner region with respect to a periphery of the first island-like semiconductor film by exposing/developing the negative photoresist film from a back surface side of a transparent substrate, etching the first insulating film in the opening portion of the resist mask, forming a second insulating film for covering the first insulating film and a conductive film thereon, and forming a first gate electrode and a second gate electrode by patterning the conductive film.
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Doi Seiji
Hirano Takuya
Hotta Kazushige
Yanai Ken-ichi
Fujitsu Display Technologies Corporation
Greer Burns & Crain Ltd.
Luu Chuong A.
Smith Matthew
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