Thin-film transistor circuit having an amorphous silicon load an

Details Thin-film transistor circuit having an amorphous silicon load an Thin-film transistor circuit having an amorphous silicon load an

1995-02-13

1995-11-28

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257379, 257537, H01L 2702, H01L 2978

Patent

active

054710707

ABSTRACT:
A thin-film transistor circuit for a logic gate circuit includes: an amorphous silicon layer; a driver transistor having a source region, a drain region, and a channel region, the source, drain, and channel regions being formed in the amorphous silicon layer; and a load device formed in the amorphous silicon layer and made of n.sup.- amorphous silicon, the load device being connected to the driver transistor.

REFERENCES:
patent: 4618873 (1986-10-01), Sasano et al.
patent: 4752814 (1988-06-01), Tuan
A. Yoshida et al., Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, pp. 1197-1198, Aug. 22-24, 1990.
P. K. Weimer et al., "Proceedings of the IEEE", vol. 54, No. 3, pp. 354-360, Mar., 1966.

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