Thin film transistor circuit and display utilizing the same

Electric lamp and discharge devices: systems – Plural power supplies – Plural cathode and/or anode load device

Reexamination Certificate

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Details

C257S346000, C257S347000, C438S048000, C438S149000, C438S156000, C438S162000, C349S043000, C349S047000

Reexamination Certificate

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10428273

ABSTRACT:
There is provided a method of easily forming thin film transistors having the same characteristics in fabricating a differential circuit or a current mirror circuit utilizing two thin film transistors made of a polycrystalline silicon semiconductor. Four each thin film transistors are used in a differential circuit and a current mirror circuit, respectively. The thin film transistors are arranged to be symmetric to each other about a symmetry center instead of using thin film transistors arranged adjacently on the substrate in the respective circuits.

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