Thin film transistor circuit and an active matrix type display d

Details Thin film transistor circuit and an active matrix type display d Thin film transistor circuit and an active matrix type display d

1995-09-21

1998-10-06

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 67, 257 72, H01L 2904

Patent

active

058180680

ABSTRACT:
A TFT circuit according to the present invention includes a first transistor and a second transistor both formed on an insulating substrate. The first transistor has a channel region comprising a polycrystalline silicon film to which a metal element for enhancing crystallization is added. The second transistor has a channel region comprising a polycrystalline silicon film to which no metal element for enhancing crystallization is added.

REFERENCES:
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5614733 (1997-03-01), Zhang et al.

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