Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1991-07-09
1992-09-01
Wojciechowicz, Edward J.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 2314, 357 4, 357 41, 307318, 307639, 361 56, 361 91, H01L 2978, H03K 326, G02F 113, H02H 300
Patent
active
051443929
ABSTRACT:
A thin-film transistor circuit (10) has a main thin-film transistor (Trl) and an input gate protection device (11) formed by first and second subsidiary thin-film transistors (Tr2) and (Tr3) connected in series and to the gate electrode (1) of the main thin-film transistor (Tr1). The gates (4 and 7) and one of the main electrodes (5 and 9) of each of the first and second subsidiary thin-film transistors (Tr2 and Tr3) are connected. The other main electrodes (6 and 8) of the first and second subsidiary thin-film transistors (Tr2 and Tr3) are connected together so that only one of the first and second subsidiary thin-film transistors (Tr3 and Tr3) conducts when a voltage above a threshold voltage is applied to the gate electrode (1) of the main thin-film transistor (Tr1). The first and second subsidiary thin-film transistors (Tr2 and Tr3) have channel regions (20) of a length (L) selected for causing breakdown of the other one of the first and second subsidiary thin-film transistors (Tr2 and Tr3) when a given voltage greater than the threshold voltage is applied to the gate electrode (1) of the main thin-film transistor (Tr1), thereby rendering both the first and second subsidiary thin-film transistors (Tr2 and Tr3) conducting.
REFERENCES:
patent: 4727213 (1985-07-01), Ariizumi
Fujishin et al-IEEE Journal of Solid-State Circuits vol. SC-20, No. 2, Apr. 1985, pp. 594-596.
Ueda et al-Japanese Journal of Applied Physics, Supplements, Aug. 1986, pp. 81-84.
Marion Michael E.
U.S. Philips Corporation
Wojciechowicz Edward J.
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