Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-10-16
1994-02-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257291, 257448, 359 54, 359 88, 359 87, H01L 2714
Patent
active
052869830
ABSTRACT:
A TFT array for a display device includes a plurality of spaced apart gate conductors and a plurality of spaced apart source conductors crossing over the gate conductors. TFT's are arranged in rows and columns. The gates of TFT's in each row are connected to a gate conductor for that row, and the sources of TFT's in each column are connected to a source conductor for that column. The drains of the TFT's are connected to respective pixel electrodes arranged in rows and columns. Each of a plurality of display sections has a storage capacitance connected at one end to an associated pixel electrode. Storage capacitance conductors are arranged parallel to respective gate conductors. Storage capacitors associated with the display sections in each row are connected to a storage capacitance conductor that is connected to the gate conductor of the next adjacent row.
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Brody et al., "A 6.times.6 Inch 20 Lines-Per-Inch Liquid Crystal Display", IEEE Transactions on Electron Devices, vol. ED-20, No. 11, Nov. 1973, pp. 995-1001.
No Author, "Capacitively-Coupled TFT/LCD with Minimized Parasitic Effects", IBM Technical Disclosure Bulletin, vol. 31, No. 3, Aug. 1988, pp. 94-97.
Hayama Masahiro
Kobayashi Kazuhiro
Nakagawa Naoki
Sakamoto Takao
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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