Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-07-12
2005-07-12
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S057000, C257S059000
Reexamination Certificate
active
06917053
ABSTRACT:
A thin film transistor array substrate, a photolithography process and a design of a mask thereof are provided. A photoresist layer is formed on a substrate, and a mask is set above the substrate. Then, the display element area of the mask is blocked in order to perform the exposure process to the photoresist layer. After that, the non-display element area of the mask is blocked in order to perform the exposure process to the photoresist layer. Finally, a development process is performed to pattern the photoresist layer. Wherein a plurality of pixel patterns is formed in the photoresist layer corresponding to the display element area, and a plurality of peripheral circuit patterns and a plurality of stitching pixel pattern are formed in the photoresist layer corresponding to the non-display element area. Moreover, each one of the stitching pixel patterns is connected to the corresponding pixel patterns.
REFERENCES:
patent: 6087648 (2000-07-01), Zhang et al.
patent: 6583439 (2003-06-01), Yamazaki et al.
Kuo Tai-Yu
Lin Tung-Tsun
Tseng Hsu-Ping
Au Optronics Corporation
Cao Phat X.
Doan Theresa T.
Jiang Chyun IP Office
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