Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2009-05-06
2011-11-01
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C257S072000, C257SE33001, C257SE29273, C257SE21411
Reexamination Certificate
active
08048698
ABSTRACT:
A thin film transistor array structure and a method for manufacturing the same are provided. The thin film transistor array structure comprises a substrate, including a transition area and a pad area. A patterned first metal layer is formed on the substrate, wherein the patterned first metal layer includes a data connecting line disposed in the transition area, and a data pad and a gate pad disposed in the pad area. A patterned first insulation layer is formed on the patterned first metal layer. The patterned first insulation layer at least defines a first opening on the gate pad, a second opening on the data pad, and a third opening in the transition area, so as to simplify following processes to increase the yield.
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Chinese language office action dated Apr. 21, 2010.
English language translation of Chinese language office action.
Au Optronics Corp.
Harrison Monica D
Sefer A.
Thomas Kayden Horstemeyer & Risley LLP
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