Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-09-04
2007-09-04
Tran, Long K. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE21596, C257SE21131, C349S192000, C349S141000, C349S143000, C349S054000
Reexamination Certificate
active
11214758
ABSTRACT:
A thin film transistor array substrate and method for repairing the same are provided. Repairing lines are formed when the data lines on the thin film transistor array substrate are defined. Furthermore, the protruding portions and branches of common lines overlap with the repairing lines and the data lines respectively. The repairing method includes performing a laser welding operation to connect the common line with the data line, the repairing line or a scan line as well as removing a portion of the lines by laser. Thus, the thin film transistor array substrate and repairing method thereof can repair line defects and increase the manufacturing yield.
REFERENCES:
patent: 4894690 (1990-01-01), Okabe et al.
patent: 6809335 (2004-10-01), Park
patent: 2002/0149020 (2002-10-01), Jung et al.
patent: 2004/0169781 (2004-09-01), Lee et al.
Chen Chin-Sheng
Huang Kun-Yuan
Hung Chien-Hsing
Liu Chih-Hung
Chunghwa Picture Tubes Ltd.
J.C. Patents
Tran Long K.
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