Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-10-18
2005-10-18
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
06956237
ABSTRACT:
A thin film transistor array substrate and a method for manufacturing the same is disclosed, in which it is possible to prevent mobile ions contained in a substrate from penetrating into a semiconductor layer by the gettering effect or neutralization in case soda lime glass is used for the substrate. The method includes forming a buffer layer on a substrate; doping impurity ions in the buffer layer; and forming a pixel electrode and a thin film transistor including a semiconductor layer on the buffer layer.
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patent: 6396079 (2002-05-01), Hayashi et al.
patent: 6713825 (2004-03-01), Hwang
patent: 6781646 (2004-08-01), Kawachi et al.
patent: 10504685 (1998-05-01), None
Robert F. Pierret “Semiconductor Device Fundamentals.” pp. 653-658.
Nam Seung Hee
Oh Jae Young
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
Munson Gene M.
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