Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2008-10-23
2010-02-16
Parker, Kenneth A (Department: 2815)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S082000, C438S149000, C438S151000
Reexamination Certificate
active
07662660
ABSTRACT:
A thin film transistor array substrate is disclosed. A gate electrode is disposed overlying a substrate. A gate dielectric layer covers the substrate and the gate electrode. A semiconductor layer is disposed overlying the gate dielectric layer, wherein the semiconductor layer comprises a channel. A source electrode electrically connects a portion of the semiconductor layer on one side of the channel, and a drain electrode electrically connects a portion of the semiconductor layer on the other side of the channel, in which the drain electrode does not overlap the gate electrode.
REFERENCES:
patent: 5473168 (1995-12-01), Kawai et al.
patent: 5656511 (1997-08-01), Shindo
patent: 5866919 (1999-02-01), Kwon et al.
patent: 6010923 (2000-01-01), Jinno
patent: 6344301 (2002-02-01), Akutsu et al.
patent: 6413804 (2002-07-01), Jeong
patent: 6590411 (2003-07-01), Lee
patent: 7166861 (2007-01-01), Saito et al.
patent: 2002/0042171 (2002-04-01), Zhang et al.
Chiu Chun-Chang
Syu Wen-Yi
AU Optronics Corp.
Ho Anthony
Parker Kenneth A
Thomas Kayden Horstemeyer & Risley
LandOfFree
Thin film transistor array substrate and fabrication method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor array substrate and fabrication method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor array substrate and fabrication method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4165853