Thin film transistor array substrate and fabrication method...

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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C438S082000, C438S149000, C438S151000

Reexamination Certificate

active

07662660

ABSTRACT:
A thin film transistor array substrate is disclosed. A gate electrode is disposed overlying a substrate. A gate dielectric layer covers the substrate and the gate electrode. A semiconductor layer is disposed overlying the gate dielectric layer, wherein the semiconductor layer comprises a channel. A source electrode electrically connects a portion of the semiconductor layer on one side of the channel, and a drain electrode electrically connects a portion of the semiconductor layer on the other side of the channel, in which the drain electrode does not overlap the gate electrode.

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