Thin film transistor array substrate and fabricating method...

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

Reexamination Certificate

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Details

C349S039000, C349S158000, C349S155000

Reexamination Certificate

active

11589185

ABSTRACT:
A thin film transistor array substrate having spacers formed without sacrificing an aperture ratio and a method for fabricating the same. The thin film transistor array substrate according to the present invention includes a gate line on a substrate; a gate insulating film on the gate line; a data line on the gate insulating film, the data line crossing the gate line to define a pixel region and the gate insulating film between the gate line and the data line, wherein at least one of the gate line and the data line includes a protrusion; a thin film transistor at a crossing the gate line and the data line; a pixel electrode at the pixel region, the pixel electrode connected to the thin film transistor; and a spacer within the protrusion dispensed by an ink-jet system.

REFERENCES:
patent: 5748266 (1998-05-01), Kodate
patent: 6088071 (2000-07-01), Yamamoto et al.
patent: 6245469 (2001-06-01), Shiba et al.
patent: 6392735 (2002-05-01), Tani
patent: 6501527 (2002-12-01), Hirose et al.
patent: 2002/0140893 (2002-10-01), Yi et al.

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