Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-05-20
2008-09-23
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C349S054000, C349S055000, C349S192000
Reexamination Certificate
active
07427781
ABSTRACT:
A thin film transistor array including a plurality of lower electrodes and a plurality of common lines for the storage capacitor of pixels is provided. The plurality of lower electrodes is electrically connected to the plurality of common lines by a connecting conductive layer, and the lower electrodes and the pixel electrodes serve as the conductive layers of the capacitor. The electrode branches are formed on the pixel area where the emitting efficiency is poor, the storage capacitance can be improved without decreasing the aperture ratio of the pixels, so as to improve the performance of the liquid crystal display apparatus.
REFERENCES:
patent: 7230658 (2007-06-01), Chae
patent: 2004/0119898 (2004-06-01), Song
patent: 2006/0077313 (2006-04-01), Liu et al.
patent: 2006/0092341 (2006-05-01), Huang et al.
patent: 2006/0146215 (2006-07-01), Huang et al.
patent: 2001-125139 (2001-05-01), None
patent: 516238 (2003-01-01), None
Au Optronics Corporation
Cao Phat X.
Jianq Chyun IP Office
Kalam Abul
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