Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-12-05
2006-12-05
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S646000, C257SE31047, C257SE31062, C257SE29080, C438S151000
Reexamination Certificate
active
07145172
ABSTRACT:
A thin film transistor array substrate of a thin film transistor liquid crystal display (TFT-LCD) is provided. The gate dielectric layer of the TFT includes a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when doped and undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled, and thereby the capacitance of the storage capacitor can be controlled.
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Chu Chun-Hung
Chuang Ta-Ko
Hsiao Chian-Chih
Lin Chih-Lung
Lin Chin-Mao
Chambliss Alonzo
Hannstar Display Corporation
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