Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2009-03-03
2010-10-12
Luu, Chuong Anh (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S350000, C257S292000
Reexamination Certificate
active
07812352
ABSTRACT:
A TFT array substrate is disclosed. In the pixel structure of the TFT array substrate, patterned transparent conductive layers are disposed under a first metal layer (M1) and a second metal layer (M2) and most areas of the M1and M2are substituted by the patterned transparent conductive layers. So, the pixel structure has high aperture ratio and large storage capacitance. Besides, a scan bonding pad on the TFT array substrate includes a first patterned transparent conductive layer (T1), the M1and a third patterned transparent conductive layer (T3). The M1is disposed on the T1, and the T3is electrically connected to the T1via a contact hole in the M1. So, the contact resistance of the scan bonding pad is small. The data bonding pad on the TFT array substrate has similar design. Moreover, fabricating methods of TFT array substrates are also provided.
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patent: 6437775 (2002-08-01), Hanari
patent: 7324175 (2008-01-01), Inoue et al.
patent: 2004/0227894 (2004-11-01), Kim et al.
patent: 05-150269 (1993-06-01), None
patent: 2001-343670 (2001-12-01), None
Chen Li-Shan
Chien Yao-Hong
Liu Xuan-Yu
Wang Chih-Chieh
Chunghwa Picture Tubes Ltd.
Jianq Chyun IP Office
Luu Chuong Anh
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