Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-05-23
2010-11-16
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S258000, C257SE27100
Reexamination Certificate
active
07834360
ABSTRACT:
The present invention relates to a thin film transistor array substrate comprising a gate line and a data line that are separated by an insulting layer and intersecting each other to define a pixel, wherein a data auxiliary line is disposed adjacent to an intersection portion between the data line and the gate line, and both ends of the data auxiliary line are on two sides of the intersection portion and connected with the data lines, respectively.
REFERENCES:
patent: 6630976 (2003-10-01), Ahn et al.
patent: 7471351 (2008-12-01), Choi
patent: 2001-0060584 (2001-07-01), None
Choi Seungjin
Song Youngsuk
Beijing Boe Optoelectronics Technology Co., Ltd.
Ladas & Parry LLP
Tran Tan N
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