Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-12-12
2006-12-12
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S057000, C257S059000, C257S066000, C257S088000, C257S291000, C257S292000, C257S293000, C257S294000, C257S347000
Reexamination Certificate
active
07148509
ABSTRACT:
A TFT array panel is provided, including an insulating substrate, gate lines horizontally provided on the insulating substrate, data lines isolated from the gate lines and intersecting the gate lines, a pixel electrode in a pixel region defined by intersecting the gate lines and data lines, a TFT for transmitting or intercepting an image signal transmitted through the plurality of data lines to the pixel electrode in response to a scanning signal transmitted from the plurality of gate lines, a transmission gate for distributing the image signal input from an input line to the plurality of data lines, and a repair line intersecting the input line of the transmission gate. Therefore, since the input repair line and the input line of the transmission gate are intersected, a parasitic capacitance occurring between the repair line and the input line of the transmission gate can be reduced.
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Kim Cheol-Min
Kim Chul-Ho
Kim Il-Gon
Park Tae-Hyeong
F. Chau & Associates LLC
Soward Ida M.
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