Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-05-08
2007-05-08
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257SE29314, C349S042000, C349S043000
Reexamination Certificate
active
11010151
ABSTRACT:
A plurality of gate lines having gate electrodes are formed on a substrate and a semiconductor layer is formed on a gate insulating layer covering the gate lines. A plurality of data lines intersecting the gate lines are formed on the gate insulating layer and a plurality of drain electrodes are formed extending parallel with and adjacent to the data lines. Furthermore, a plurality of storage capacitor conductors are formed to be connected to the drain electrodes and to overlap an adjacent gate line. A passivation layer made of an organic material is formed on the above structure and has a contact hole. Furthermore, a plurality of pixel electrodes are formed to be electrically connected to the drain electrodes through the contact hole.
REFERENCES:
patent: 2002/0180900 (2002-12-01), Chae et al.
patent: 2004/0007704 (2004-01-01), Kim
patent: 2004/0113149 (2004-06-01), Kim
patent: 2004/0262611 (2004-12-01), Lai
Kim Kyung-Wook
Lee Seong-Young
Youn Joo-Ae
Cantor & Colburn LLP
Jackson Jerome
Nguyen Joseph
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