Thin film transistor array panel and manufacturing method...

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

Reexamination Certificate

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C257S059000, C257S072000

Reexamination Certificate

active

10759389

ABSTRACT:
A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole.

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English Language Abstract, CN Patent First Publication No. 1384394, Dec. 11, 2002, 1 page.
English version of Chinese Office Action corresponding to Chinese Patent Application No. 2004100000993.9, 7 pages.

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