Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-05-22
2007-05-22
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S347000, C349S042000
Reexamination Certificate
active
11174277
ABSTRACT:
A thin film transistor array panel is provided, which includes: a substrate; a plurality of first signal lines formed on the substrate; a plurality of second signal lines intersecting, and insulated from, the first signal lines; a plurality of pixel electrodes formed in intersection areas of the first and second signal lines; a plurality of first thin film transistors electrically connected to the first signal lines, the second signal lines, and the pixel electrodes; a plurality of buffer electrodes capacitively coupled to the pixel electrodes and located at a boundary of the intersection areas; and a plurality of second thin film transistors electrically connected to the buffer electrodes and the first signal lines, wherein the first signal lines are connected to the pixel electrodes of a previous row.
REFERENCES:
patent: 2006/0027813 (2006-02-01), Kim et al.
Ban Byeong-Seob
Kim Jong-Lae
Oh Joon-Hak
Park So-Youn
F. Chau & Associates LLC
Prenty Mark V.
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